Welcome to Hotenda.com Online Store!

logo
userjoin
Home

ZXTN5551ZTA

ZXTN5551ZTA

ZXTN5551ZTA

Diodes Incorporated

ZXTN5551ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN5551ZTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1.2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN5551
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage160V
Transition Frequency 130MHz
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:14239 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.216995$0.216995
10$0.204712$2.04712
100$0.193125$19.3125
500$0.182193$91.0965
1000$0.171880$171.88

ZXTN5551ZTA Product Details

ZXTN5551ZTA Overview


DC current gain in this device equals 80 @ 10mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 130MHz.This device can take an input voltage of 160V volts before it breaks down.The maximum collector current is 600mA volts.

ZXTN5551ZTA Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz

ZXTN5551ZTA Applications


There are a lot of Diodes Incorporated ZXTN5551ZTA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News