JANSR2N2907AUB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The product comes in the supplier device package of UB.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.In extreme cases, the collector current can be as low as 600mA volts.
JANSR2N2907AUB Features
the DC current gain for this device is 100 @ 1mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANSR2N2907AUB Applications
There are a lot of Microsemi Corporation JANSR2N2907AUB applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
