2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT666
SOT-23
2N7002BKV,115 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
1.6Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Max Power Dissipation
350mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
525mW
Turn On Delay Time
5 ns
Power - Max
350mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V
Rise Time
6ns
Fall Time (Typ)
7 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
340mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
0.34A
Drain to Source Breakdown Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:18939 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2N7002BKV,115 Product Details
Description: The 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET is a Nexperia transistor designed for use in a variety of applications. It is a dual N-channel FET with a maximum voltage of 60 V and a maximum current of 1.6 Ohms. It has a power dissipation of 350 mW and a gate capacitance of 0.6nC. It is packaged in a SOT666 package.
Features: • Dual N-Channel FET • Maximum Voltage: 60 V • Maximum Current: 1.6 Ohms • Power Dissipation: 350 mW • Gate Capacitance: 0.6nC • Package: SOT666
Applications: The 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET is suitable for a variety of applications, including power management, motor control, and signal conditioning. It can be used in automotive, industrial, and consumer electronics.
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