JANTXV2N6059 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 120mA, 12A.With the emitter base voltage set at 5V, an efficient operation can be achieved.
JANTXV2N6059 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N6059 Applications
There are a lot of Microsemi Corporation JANTXV2N6059 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
