JAN2N6052 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 120mA, 12A.The emitter base voltage can be kept at 5V for high efficiency.
JAN2N6052 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JAN2N6052 Applications
There are a lot of Microsemi Corporation JAN2N6052 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
