JAN2N3999 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 500mA, 5A.An emitter's base voltage can be kept at 8V to gain high efficiency.The maximum collector current is 5A volts.
JAN2N3999 Features
the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 8V
JAN2N3999 Applications
There are a lot of Microsemi Corporation JAN2N3999 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
