JANTXV2N6058 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 6A 3V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.
JANTXV2N6058 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N6058 Applications
There are a lot of Microsemi Corporation JANTXV2N6058 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
