2N4449UB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of UB.
2N4449UB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the supplier device package of UB
2N4449UB Applications
There are a lot of Microsemi Corporation 2N4449UB applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
