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JANTXV2N3999

JANTXV2N3999

JANTXV2N3999

Microsemi Corporation

JANTXV2N3999 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3999 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Stud
Mounting Type Chassis, Stud Mount
Package / Case TO-210AA, TO-59-4, Stud
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/374
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation2W
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count4
JESD-30 Code O-MUPM-X3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2V @ 500mA, 5A
Current - Collector (Ic) (Max) 10A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 8V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:76 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$153.53800$15353.8

JANTXV2N3999 Product Details

JANTXV2N3999 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 8V can result in a high level of efficiency.During maximum operation, collector current can be as low as 5A volts.

JANTXV2N3999 Features


the DC current gain for this device is 80 @ 1A 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 8V

JANTXV2N3999 Applications


There are a lot of Microsemi Corporation JANTXV2N3999 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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