JANTXV2N6051 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 120mA, 12A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.
JANTXV2N6051 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTXV2N6051 Applications
There are a lot of Microsemi Corporation JANTXV2N6051 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
