JAN2N6300 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 4A 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 80mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a transition frequency of 4MHz in the part.
JAN2N6300 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JAN2N6300 Applications
There are a lot of Microsemi Corporation JAN2N6300 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
