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JANTXV2N5416

  • JANTXV2N5416 - JANTXV2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • JANTXV2N5416 - JANTXV2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

JANTXV2N5416

JANTXV2N5416

Microsemi Corporation

JANTXV2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N5416 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-5
Number of Pins 3
PackagingBulk
Published 2002
JESD-609 Code e0
Part StatusActive
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation750mW
Terminal Position BOTTOM
Terminal FormWIRE
Reference Standard MILITARY STANDARD (USA)
JESD-30 Code O-MBCY-W4
Qualification StatusQualified
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation750mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 30
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:650 items

Pricing & Ordering

QuantityUnit PriceExt. Price
107$16.68972$1785.80004

JANTXV2N5416 Product Details

JANTXV2N5416 Overview


The emitter base voltage can be kept at 6V for high efficiency.When collector current reaches its maximum, it can reach 1A volts.

JANTXV2N5416 Features


the emitter base voltage is kept at 6V

JANTXV2N5416 Applications


There are a lot of Microsemi Corporation JANTXV2N5416 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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