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2N6678

  • 2N6678 - 2N6678 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • 2N6678 - 2N6678 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

2N6678

2N6678

Microsemi Corporation

2N6678 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N6678 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-3
PackagingBulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation6W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation6W
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 15A
JEDEC-95 Code TO-204AA
Collector Base Voltage (VCBO) 650V
Emitter Base Voltage (VEBO) 8V
DC Current Gain-Min (hFE) 8
RoHS StatusNon-RoHS Compliant
In-Stock:98 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$105.61600$10561.6

2N6678 Product Details

2N6678 Overview


Keeping the emitter base voltage at 8V can result in a high level of efficiency.Maximum collector currents can be below 15A volts.

2N6678 Features


the emitter base voltage is kept at 8V

2N6678 Applications


There are a lot of Microsemi Corporation 2N6678 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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