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2N3636

2N3636

2N3636

Microsemi Corporation

Trans GP BJT PNP 175V 1A 3-Pin TO-39

SOT-23

2N3636 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Supplier Device Package TO-39
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation1W
Power - Max 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 175V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 175V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 175V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:698 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$11.95950$1195.95

About 2N3636

The 2N3636 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans GP BJT PNP 175V 1A 3-Pin TO-39.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N3636, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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