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JANTX2N5416

JANTX2N5416

JANTX2N5416

Microsemi Corporation

JANTX2N5416 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N5416 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/485
JESD-609 Code e0
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation750mW
Terminal Position BOTTOM
Terminal FormWIRE
Reference Standard MILITARY STANDARD (USA)
JESD-30 Code O-MBCY-W4
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation750mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 2V @ 5mA, 50mA
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:640 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.646000$10.646
10$10.043396$100.43396
100$9.474902$947.4902
500$8.938587$4469.2935
1000$8.432629$8432.629

JANTX2N5416 Product Details

JANTX2N5416 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 6V, an efficient operation can be achieved.A maximum collector current of 1A volts can be achieved.

JANTX2N5416 Features


the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V

JANTX2N5416 Applications


There are a lot of Microsemi Corporation JANTX2N5416 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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