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JANTX2N1711

JANTX2N1711

JANTX2N1711

Microsemi Corporation

JANTX2N1711 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N1711 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/225
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation800mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:162 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$73.35000$73.35
500$72.6165$36308.25
1000$71.883$71883
1500$71.1495$106724.25
2000$70.416$140832
2500$69.6825$174206.25

JANTX2N1711 Product Details

JANTX2N1711 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 1.5V @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.The maximum collector current is 500mA volts.

JANTX2N1711 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V

JANTX2N1711 Applications


There are a lot of Microsemi Corporation JANTX2N1711 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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