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JAN2N1613

JAN2N1613

JAN2N1613

Microsemi Corporation

JAN2N1613 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N1613 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/181
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation800mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:95 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$112.50000$112.5
500$111.375$55687.5
1000$110.25$110250
1500$109.125$163687.5
2000$108$216000
2500$106.875$267187.5

JAN2N1613 Product Details

JAN2N1613 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.The emitter base voltage can be kept at 7V for high efficiency.Maximum collector currents can be below 500mA volts.

JAN2N1613 Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V

JAN2N1613 Applications


There are a lot of Microsemi Corporation JAN2N1613 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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