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JANTX2N3499

JANTX2N3499

JANTX2N3499

Microsemi Corporation

JANTX2N3499 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3499 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/366
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1096 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.209000$7.209
10$6.800943$68.00943
100$6.415984$641.5984
500$6.052815$3026.4075
1000$5.710203$5710.203

JANTX2N3499 Product Details

JANTX2N3499 Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 30mA, 300mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

JANTX2N3499 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

JANTX2N3499 Applications


There are a lot of Microsemi Corporation JANTX2N3499 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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