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JAN2N5665

JAN2N5665

JAN2N5665

Microsemi Corporation

JAN2N5665 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N5665 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Contact PlatingLead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/455
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation2.5W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation2.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 5A
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
RoHS StatusNon-RoHS Compliant
In-Stock:350 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$32.36710$3236.71

JAN2N5665 Product Details

JAN2N5665 Overview


In this device, the DC current gain is 25 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 1A, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A maximum collector current of 5A volts can be achieved.

JAN2N5665 Features


the DC current gain for this device is 25 @ 1A 5V
the vce saturation(Max) is 1V @ 1A, 5A
the emitter base voltage is kept at 6V

JAN2N5665 Applications


There are a lot of Microsemi Corporation JAN2N5665 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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