JANTXV2N6298 Overview
This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 80mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 4MHz.
JANTXV2N6298 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTXV2N6298 Applications
There are a lot of Microsemi Corporation JANTXV2N6298 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
