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JANTX2N3498

JANTX2N3498

JANTX2N3498

Microsemi Corporation

JANTX2N3498 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3498 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/366
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:598 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.294000$7.294
10$6.881132$68.81132
100$6.491634$649.1634
500$6.124183$3062.0915
1000$5.777531$5777.531

JANTX2N3498 Product Details

JANTX2N3498 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.A maximum collector current of 500mA volts can be achieved.

JANTX2N3498 Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

JANTX2N3498 Applications


There are a lot of Microsemi Corporation JANTX2N3498 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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