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FMMT734TA

FMMT734TA

FMMT734TA

Diodes Incorporated

FMMT734TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT734TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation625mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-800mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT734
Pin Count3
Number of Elements 1
Polarity NPN, PNP
Element ConfigurationSingle
Power Dissipation625mW
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1.05V @ 5mA, 1A
Collector Emitter Breakdown Voltage100V
Collector Emitter Saturation Voltage-750mV
Max Breakdown Voltage 100V
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current -800mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11232 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.59000$0.59
500$0.5841$292.05
1000$0.5782$578.2
1500$0.5723$858.45
2000$0.5664$1132.8
2500$0.5605$1401.25

FMMT734TA Product Details

FMMT734TA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of -750mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.05V @ 5mA, 1A.Continuous collector voltages of -800mA should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can take a breakdown input voltage of 100V volts.In extreme cases, the collector current can be as low as 800mA volts.

FMMT734TA Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 1.05V @ 5mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is -800mA

FMMT734TA Applications


There are a lot of Diodes Incorporated FMMT734TA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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