2SA1705S-AN Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 2V.As it features a collector emitter saturation voltage of -180mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SA1705S-AN Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
2SA1705S-AN Applications
There are a lot of ON Semiconductor 2SA1705S-AN applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
