JANTX2N2222AUB Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product package UB comes from the supplier.The device exhibits a collector-emitter breakdown at 50V.During maximum operation, collector current can be as low as 800mA volts.
JANTX2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB
JANTX2N2222AUB Applications
There are a lot of Microsemi Corporation JANTX2N2222AUB applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
