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JANSR2N7381

JANSR2N7381

JANSR2N7381

Microsemi Corporation

N CHANNEL MOSFET TO-257 RAD

SOT-23

JANSR2N7381 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)
Mounting Type Through Hole
Package / Case TO-257-3
Supplier Device Package TO-257
Operating Temperature-55°C~150°C TJ
PackagingTray
Published 1997
Series Military, MIL-PRF-19500/614
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta 75W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 490mOhm @ 9.4A, 12V
Vgs(th) (Max) @ Id 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C 9.4A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 12V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 12V
Vgs (Max) ±20V
In-Stock:2752 items

About JANSR2N7381

The JANSR2N7381 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features N CHANNEL MOSFET TO-257 RAD.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the JANSR2N7381, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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