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JAN2N657S

  • JAN2N657S - JAN2N657S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • JAN2N657S - JAN2N657S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

JAN2N657S

JAN2N657S

Microsemi Corporation

JAN2N657S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N657S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.21.00.95
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Reference Standard MIL-19500/74E
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 20mA
DC Current Gain-Min (hFE) 30
RoHS StatusNon-RoHS Compliant
In-Stock:2634 items

JAN2N657S Product Details

JAN2N657S Overview


There is a 100V maximal voltage in the device due to collector-emitter breakdown.

JAN2N657S Features



JAN2N657S Applications


There are a lot of Microsemi Corporation JAN2N657S applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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