MPS918G Overview
In this device, the DC current gain is 20 @ 8mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 1mA, 10mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.There is a transition frequency of 600MHz in the part.Collector current can be as low as 50mA volts at its maximum.
MPS918G Features
the DC current gain for this device is 20 @ 8mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 600MHz
MPS918G Applications
There are a lot of ON Semiconductor MPS918G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
