JAN2N6058 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 3V, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 120mA, 12A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.
JAN2N6058 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JAN2N6058 Applications
There are a lot of Microsemi Corporation JAN2N6058 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
