JANTX2N2222AUA Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.4-SMD is the supplier device package for this product.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.In extreme cases, the collector current can be as low as 800mA volts.
JANTX2N2222AUA Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of 4-SMD
JANTX2N2222AUA Applications
There are a lot of Microsemi Corporation JANTX2N2222AUA applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
