2N3013 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N3013 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N3013
Power - Max
360mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA 400mV
Current - Collector Cutoff (Max)
300nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
350MHz
RoHS Status
Non-RoHS Compliant
In-Stock:259 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$30.68000
$30.68
500
$30.3732
$15186.6
1000
$30.0664
$30066.4
1500
$29.7596
$44639.4
2000
$29.4528
$58905.6
2500
$29.146
$72865
2N3013 Product Details
2N3013 Description
The ON Semiconductor 2N3013 is an NPN bipolar transistor for high-speed and high-frequency amplifier applications for saturated switching at high speed.
2N3013 Features
Directly replaces legacy Fairchild, Microsemi, Motorola & National Semiconductor transistors
Suited for use in Industrial, Medical, Military & Aerospace industries
Small footprint for high integration & close placement to signal source
Committed long-term support with no die mask changes
2N3013 Applications
General Use
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