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APTGF50H60T2G

APTGF50H60T2G

APTGF50H60T2G

Microsemi Corporation

POWER MOD IGBT NPT FULL BRDG SP2

SOT-23

APTGF50H60T2G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 22
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation250W
Number of Elements 1
Configuration Full Bridge Inverter
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage600V
Input Capacitance2.2nF
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
IGBT Type NPT
NTC ThermistorYes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:3452 items

About APTGF50H60T2G

The APTGF50H60T2G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER MOD IGBT NPT FULL BRDG SP2.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTGF50H60T2G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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