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FMG2G150US60

FMG2G150US60

FMG2G150US60

ON Semiconductor

FMG2G150US60 datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

SOT-23

FMG2G150US60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Chassis Mount
Package / Case 7PM-HA
Supplier Device Package 7PM-HA
Operating Temperature-40°C~150°C TJ
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 595W
Input Standard
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 150A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 150A
NTC ThermistorNo
In-Stock:3475 items

FMG2G150US60 Product Details

FMG2G150US60 Description

FMG2G150US60 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FMG2G150US60 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FMG2G150US60 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FMG2G150US60 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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