Name: BSM200GB60DLCHOSA1
Brand: Infineon Technologies
SKU: BSM200GB60DLCHOSA1
Availability: InStock

new-10%

BSM200GB60DLCHOSA1

Manufacturer part number:BSM200GB60DLCHOSA1

Manufacturer:Infineon Technologies

Description:BSM200GB60DLCHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSM200GB60DLCHOSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	34
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C
Published	2000
Pbfree Code	no
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Max Power Dissipation	445W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	7
JESD-30 Code	R-XUFM-X7
Number of Elements	2
Configuration	Single
Element Configuration	Dual
Power Dissipation	445W
Case Connection	ISOLATED
Power - Max	730W
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	230A
Current - Collector Cutoff (Max)	500μA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.95V
Turn On Time	229 ns
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 200A
Turn Off Time-Nom (toff)	326 ns
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	9nF @ 25V
Height	30.5mm
Length	94mm
Width	34mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free

BSM200GB60DLCHOSA1 Product Details

BSM200GB60DLCHOSA1 Description

BSM200GB60DLCHOSA1 is a 600v IGBT. The transistor BSM200GB60DLCHOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Appliances, Enterprise systems, and Datacenter & enterprise computing. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor BSM200GB60DLCHOSA1 is in the Tray package with 730W power dissipation.