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APTCV60HM45RCT3G

APTCV60HM45RCT3G

APTCV60HM45RCT3G

Microsemi Corporation

POWER MOD IGBT3 FULL BRIDGE SP3

SOT-23

APTCV60HM45RCT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 36 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Operating Temperature-40°C~175°C TJ
Published 1999
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation250W
Number of Elements 1
Configuration Full Bridge Inverter
Power - Max 250W
Input Single Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 50A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage600V
Input Capacitance3.15nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
RoHS StatusRoHS Compliant
In-Stock:105 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$72.11350$7211.35

About APTCV60HM45RCT3G

The APTCV60HM45RCT3G from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER MOD IGBT3 FULL BRIDGE SP3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APTCV60HM45RCT3G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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