Welcome to Hotenda.com Online Store!

logo
userjoin
Home

APT80SM120S

APT80SM120S

APT80SM120S

Microsemi Corporation

POWER MOSFET - SIC

SOT-23

APT80SM120S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~175°C TJ
PackagingBulk
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 625W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 55m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 80A
RoHS StatusRoHS Compliant
In-Stock:3686 items

About APT80SM120S

The APT80SM120S from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER MOSFET - SIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APT80SM120S, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News