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NVD5867NLT4G-TB01

NVD5867NLT4G-TB01

NVD5867NLT4G-TB01

ON Semiconductor

MOSFET N-CH 60V 22A DPAK DPAK

SOT-23

NVD5867NLT4G-TB01 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.3W Ta 43W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:3835 items

About NVD5867NLT4G-TB01

The NVD5867NLT4G-TB01 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 22A DPAK DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NVD5867NLT4G-TB01, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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