SPU30P06P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
SPU30P06P Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Series
SIPMOS®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
unknown
Current Rating
-30A
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
Case Connection
DRAIN
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
75m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds
1535pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Rise Time
11ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
30A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.075Ohm
Drain to Source Breakdown Voltage
-60V
Pulsed Drain Current-Max (IDM)
120A
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1408 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$14.774871
$14.774871
10
$13.938557
$139.38557
100
$13.149582
$1314.9582
500
$12.405266
$6202.633
1000
$11.703081
$11703.081
SPU30P06P Product Details
SPU30P06P Description
SPU30P06P is a P-channel SIPMOS Power-Transistor manufactured by Infineon. The power MOSFET is the most widely used power semiconductor device in the world. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor SPU30P06P is in the TO-251-3 package with 125W power dissipation. The Infineon SPU30P06P is with ±20V gate-source voltage.
SPU30P06P Features
P-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
SPU30P06P Applications
Broadband fixed-line access
Datacom module
Wired networking
Wireless infrastructure
Enterprise machine
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