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APT5010JLLU2

APT5010JLLU2

APT5010JLLU2

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Bulk 100m Ω @ 23A, 10V ±30V 4360pF @ 25V 96nC @ 10V 500V SOT-227-4, miniBLOC

SOT-23

APT5010JLLU2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2004
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal FormUNSPECIFIED
Pin Count4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 378W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation378W
Case Connection ISOLATED
Turn On Delay Time11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 41A Tc
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:299 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$33.07000$33.07
10$30.58800$305.88
25$28.10800$702.7
100$26.12400$2612.4
250$23.97460$5993.65

APT5010JLLU2 Product Details

APT5010JLLU2 Overview


A device's maximal input capacitance is 4360pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 41A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 25 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

APT5010JLLU2 Features


a continuous drain current (ID) of 41A
the turn-off delay time is 25 ns
a 500V drain to source voltage (Vdss)


APT5010JLLU2 Applications


There are a lot of Microsemi Corporation
APT5010JLLU2 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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