Name: BSS84PWH6327XTSA1
Brand: Infineon Technologies
SKU: BSS84PWH6327XTSA1
Price: 0.39000 USD
Availability: InStock

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BSS84PWH6327XTSA1

Manufacturer part number:BSS84PWH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS84PWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS84PWH6327XTSA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2000
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-150mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	6.7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	8 Ω @ 150mA, 10V
Vgs(th) (Max) @ Id	2V @ 20μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	19.1pF @ 25V
Current - Continuous Drain (Id) @ 25°C	150mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 10V
Rise Time	16.2ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20.5 ns
Turn-Off Delay Time	8.6 ns
Continuous Drain Current (ID)	-150mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-60V
Max Junction Temperature (Tj)	150°C
Height	1mm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

BSS84PWH6327XTSA1 Product Details

BSS84PWH6327XTSA1 Description

Infineon Technologies' CoolMOSTM 7th generation platform, based on the superjunction (SJ) principle, is a game-changing technology for high-voltage power MOSFETs. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. The benefits of a fast switching SJ MOSFET with exceptional ease of use are combined with reduced ringing, superior body diode endurance against hard commutation, and outstanding ESD performance.