PSMN070-200P,127 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 462 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4570pF @ 25V is its maximum input capacitance.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 35A.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Its maximum pulsed drain current is 140A, which is also its maximum rating peak drainage current.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.With its 200V power supply, it is capable of handling a dual voltage maximum.This device reduces its overall power consumption by using drive voltage (10V).
PSMN070-200P,127 Features
the avalanche energy rating (Eas) is 462 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 140A.
PSMN070-200P,127 Applications
There are a lot of Nexperia USA Inc. PSMN070-200P,127 applications of single MOSFETs transistors.
- Battery Protection Circuit
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
- PFC stages, hard switching PWM stages and resonant switching
- Power Management Functions
- AC-DC Power Supply
- General Purpose Interfacing Switch
- DC/DC converters
- Micro Solar Inverter
- Solar Inverter
