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2N5666

2N5666

2N5666

Microsemi Corporation

2N5666 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5666 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-5
Number of Pins 3
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation1.2W
Terminal Position BOTTOM
Terminal FormWIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation1.2W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 5A
Transition Frequency 20MHz
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 5
RoHS StatusNon-RoHS Compliant
In-Stock:180 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$39.40650$3940.65

2N5666 Product Details

2N5666 Overview


An emitter's base voltage can be kept at 6V to gain high efficiency.A transition frequency of 20MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

2N5666 Features


the emitter base voltage is kept at 6V
a transition frequency of 20MHz

2N5666 Applications


There are a lot of Microsemi Corporation 2N5666 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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