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2SA2127

2SA2127

2SA2127

ON Semiconductor

2SA2127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA2127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2012
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Transistor Application SWITCHING
Gain Bandwidth Product420MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
JEDEC-95 Code TO-226AE
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 420MHz
Collector Emitter Saturation Voltage-200mV
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -6V
hFE Min 200
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:45608 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.18000$0.18
500$0.1782$89.1
1000$0.1764$176.4
1500$0.1746$261.9
2000$0.1728$345.6
2500$0.171$427.5

2SA2127 Product Details

2SA2127 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.In this part, there is a transition frequency of 420MHz.A maximum collector current of 2A volts can be achieved.

2SA2127 Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 420MHz

2SA2127 Applications


There are a lot of ON Semiconductor 2SA2127 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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