KSC5402DTTU Overview
This device has a DC current gain of 6 @ 1A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 11MHz.Maximum collector currents can be below 2A volts.
KSC5402DTTU Features
the DC current gain for this device is 6 @ 1A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 750mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 2A
a transition frequency of 11MHz
KSC5402DTTU Applications
There are a lot of ON Semiconductor KSC5402DTTU applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
