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2N5014

2N5014

2N5014

Microsemi Corporation

2N5014 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5014 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code8541.29.00.95
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Current - Collector (Ic) (Max) 200mA
Collector Base Voltage (VCBO) 900V
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:3505 items

Pricing & Ordering

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2N5014 Product Details

2N5014 Overview


This device has a DC current gain of 30 @ 20mA 10V, which is the ratio between the base current and the collector current.Collector current can be as low as 200mA volts at its maximum.

2N5014 Features


the DC current gain for this device is 30 @ 20mA 10V

2N5014 Applications


There are a lot of Microsemi Corporation 2N5014 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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