BC337-25 B1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 5V.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 45V.
BC337-25 B1G Features
the DC current gain for this device is 160 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
BC337-25 B1G Applications
There are a lot of Taiwan Semiconductor Corporation BC337-25 B1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
