2N5551ZL1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 5mA, 50mA.The part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 160VV - Maximum voltage.
2N5551ZL1 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551ZL1 Applications
There are a lot of Rochester Electronics, LLC 2N5551ZL1 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
