JAN2N3498L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Collector current can be as low as 500mA volts at its maximum.
JAN2N3498L Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
JAN2N3498L Applications
There are a lot of Microsemi Corporation JAN2N3498L applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
