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2N7008-G

2N7008-G

2N7008-G

Microchip Technology

MOSFET (Metal Oxide) N-Channel Bulk 7.5 Ω @ 500mA, 10V ±30V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA)

SOT-23

2N7008-G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2008
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal FormWIRE
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1W
Turn On Delay Time20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Tj
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±30V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Height 5.33mm
Length 5.21mm
Width 4.19mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10587 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.582473$0.582473
10$0.549502$5.49502
100$0.518399$51.8399
500$0.489055$244.5275
1000$0.461372$461.372

2N7008-G Product Details

2N7008-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 230mA amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

2N7008-G Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 20 ns


2N7008-G Applications


There are a lot of Microchip Technology
2N7008-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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