IXTQ52N30P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3490pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 52A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 150A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IXTQ52N30P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 150A.
IXTQ52N30P Applications
There are a lot of IXYS
IXTQ52N30P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
