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IPB100N08S207ATMA1

IPB100N08S207ATMA1

IPB100N08S207ATMA1

Infineon Technologies

MOSFET N-CH 75V 100A TO263-3

SOT-23

IPB100N08S207ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
Series OptiMOS™
JESD-609 Code e3
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time26 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time51ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage75V
Drain-source On Resistance-Max 0.0068Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 810 mJ
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:3586 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.362144$11.362144
10$10.719004$107.19004
100$10.112268$1011.2268
500$9.539875$4769.9375
1000$8.999883$8999.883

About IPB100N08S207ATMA1

The IPB100N08S207ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 75V 100A TO263-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB100N08S207ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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